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AlGaAs |
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? References in periodicals archive |
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They painstakingly fabricated a transistor-size
microstructure atomic layer by atomic layer from the semiconductors
gallium arsenide and aluminum gallium arsenide. The ASDL series of low-cost IR emitters and detectors incorporates
Avago's Aluminum Gallium Arsenide on GaAs (AlGaAs/GaAs) LED
technology and are available in T1, T13/4 and Side Look standard
packaging and optimized to operate at wavelengths of 870 and 940nm to
provide design flexibility. The device is fabricated
using Skyworks' high-reliability aluminum gallium arsenide (AlGaAs)
heterojunction bipolar transistor (HBT) technology; and
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