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BICMOS
(redirected from Bipolar Complementary Metal Oxide Semiconductor)

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AcronymDefinition
BICMOSBipolar Complementary Metal Oxide Semiconductor


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MOSIS, a provider of low-cost prototyping and small volume production services for custom ASICs, announces prototype and low volume fabrication access to IBM's fourth generation foundry technology, 8WL, the 130 nanometer (nm) silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) process.
25 microwave bipolar complementary metal oxide semiconductor (BiCMOS) process offers high-performance technology with NpN heterojunction bipolar transistors (HBTs) up to fT/fmax= 180/220 GHz.
A custom bipolar complementary metal oxide semiconductor (BiCMOS) integrated circuit enables the internal PAC function and decoder circuitry to control the RF switches.
 
 
 
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