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BJTBipolar Junction Transistor
BJTBusiness Japanese Proficiency Test
BJTBusiness Jet Traveler (publication)
BJTBlue Jean Teddy
BJTBay Junction Technology (San Jose, CA)
BJTBrandon-Jonathan Teresi (foundation eponym)
BJTBehineh Jouyan Tehran (Iranian computer company; est. 1984)
BJTBilateral Juxtafoveal Telangiectasis
References in periodicals archive ?
Name Instrument Variable Variable 1 MOS Capacitor Agilent V, F V,l as data E4980A set/array 2 BJT Agilent V V,l as data Characterization 4156C set/array 3 BJT Gummel Agilent V V,l as data plot 4156C set/array 4 MOSFETID-VD Agilent V V,l as data Characterization 4145B set/array 5 MOSFET ID-VG Agilent V V,l as data Characterization 4145B set/array 6 Atomic Force NanoSurf Set of numeric Image Microscope values for area and scan lines SL Experiment Setup Actual No.
JETRO hope that the test, now the BJT, will continue to gain international recognition among companies and students of Japanese around the world as a standard test for evaluating business Japanese proficiency.
I think that right now we have a bias for non-MOSFET-based technology, like BJTs and JFETs," says Mazzola.
Various reports related to electric field dependent impact ionization have been published using SiC Schottky barrier diode, MOSFET and BJT [11-13].
The chosen transistor is a low cost, medium noise BJT, BFR380F from Siemens Technologies.
Primero se intento con amplificadores fabricados a base de transistores BJT (Bipolar Junction Transistor), por ejemplo LM324, LM741, de diferentes empresas fabricantes.
O] (a FET enters the triode region and a BJT or HBT enters in saturation).
Offered by BJT in Hamden, Connecticut, this little pistol is lightweight (it weighs a scant but substantial 14 ounces unloaded), short and handy.
Company and mother company - Fab details (name - address - country - area - phone/Fax - Website - Region - Area) - Fab type (Front-end, back-end, foundry, fabless) - Clean room details (size, class, construction and equipment cost and year) - Process technology (Bipolar, BICMOS, BCD, CMOS) Maximum voltage - Substrate material (Si, SiC, Sapphire, GaAs, GaN, SOI) - Company contact (name - position - e-mail - phone) - Type of devices (MOSFET, IGBT, Thyristor/SCR/GTO, BJT, Diodes, Power IC, IPM, Power modules, Other FET) - Wafer characteristics (FZ/CZ, geometry, size, active layer) - Production capacity in wafers per month
The designed log domain universal biquad filter is simulated in PSpice by using ideal transistors that are default BJT models with BF = 10000.
MOSFETs offer much higher input impedance and lower voltage drop than bipolar junction transistors (BJTs), and do not require biasing resistors as MOSFET switching is controlled by differences in voltage rather than a current, as with BJT s.
The BJT is a current-controlled device, whereas the MOSFET is a voltage-controlled device.