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Technology that reduces the electric field strength at the gate edge, leading to improved breakdown voltage, and enables high-voltage, high-power operation. The VIP-2 process is characterized by transistors with Ft and Fmax in excess of 300GHz, four levels of interconnect metals, and breakdown voltage greater than 4V. T-gard 20 features a 9000 Vac dielectric breakdown voltage (DBV) that contributes to its high electrical reliability. |
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