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The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer. However, researchers at Innovative Silicon have turned this parasitic effect into a useful feature by replacing the capacitor in a conventional DRAM cell with the capacitance between the gate and the buried oxide layer (BOX). The thin buried oxide layer acts as a barrier that can reduce electrical leakage from the transistors, resulting in semiconductor devices that are faster and more power efficient. |
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