This bilinear transformation offers a simpler and faster approach to systematically derive associated circle equations for microwave transistor amplifiers in the CCITL system compared to rigorous parameter conversions reported previously [26,28].
APPLICATION OF THE BILINEAR TRANSFORMATION APPROACH TO MICROWAVE TRANSISTOR AMPLIFIER DESIGN IN THE CCITL SYSTEM
Figure 5 shows a schematic diagram of the microwave transistor amplifier using reciprocal open-circuited single-stub shunt tuners as the IMN and OMN in the CCITL system.
At a given frequency in the CCITL system, oscillations of the microwave transistor amplifier are possible when the input and/or output ports present a negative resistance resulting in [absolute value of [[GAMMA].
L] for which the real parts of input and output impedances are negative resulting in a potentially unstable amplifier in the CCITL system.
By applying the bilinear transformation to the potentially unstable transistor, the ISC and OSC in the CCITL system can also be drawn in Meta-Smith charts.
Operating Power Gain Considerations in the CCITL System
The operating power gain can be found in terms of S-parameters and the load reflection coefficient in the CCITL system as
The matching circuit configuration designed for the test potentially unstable amplifier on Meta Smith-charts employs reciprocal CCITL open-circuited single-stub shunt tuners as shown in Figure 5.
A design to achieve high stability and desired operating power gain of the amplifier in the CCITL system is demonstrated through a sample matching circuit by using the same potentially unstable transistor from the previous section.
PHI]] is generally a function of the argument [PHI] and varies depending on the type of CCITL .
transistors, to build microwave transistor amplifiers in the CCITL system using the bilinear transformation approach.