CNFETCarbon-Nanotube Field-Effect Transistors
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The difference in physical scale makes the result even more striking -- the width of an FET device is typically 2 to 10 microns, while the active, current-carrying element in a CNFET (the nanotube itself) is about 1.
The top gate devices exhibited excellent electrical characteristics, including steep subthreshold slope (measure of how well a transistor turns on and off) and high transconductance at low voltages, a significant improvement to previously reported CNFETs which used the silicon wafer as a gate and a thick gate dielectric.
By creating CNFETS that are similar in structure to that of conventional silicon MOSFETs, the team was able to compare CNTs with silicon transistors.