E-pHEMT

AcronymDefinition
E-pHEMTEnhancement Mode Pseudomorphic High Electron Mobility Transistor
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The new inverted class F mode of operation [5] is employed for high efficiency operation of E-PHEMT in order to compensate for its low [I.
A PAE of 70 percent or higher is achieved for the E-PHEMT for the whole range of voltages from 7 to 2 V.
An E-PHEMT features a PAE of 70 percent or higher at operating voltages ranging from 2 to 7 V At 7 V and 900 MHz a state-of-the-art PAE of 85 percent and 630 mW/mm of output power were achieved for the D-PHEMT, while PAE of 82 percent and 340 mW/mm of output power were achieved for the E-PHEMT.
In addition to infrared transceivers for transmitting data, Avago provides FBAR filters and E-pHEMT and CoolPAM power amplifiers that save battery life and help shrink handset size, surface-mount LEDs that provide backlighting styling options, proximity sensors that automate the speakerphone, and ambient light photo sensors that save battery life by controlling backlighting.
5-micron GaAs E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) process.
Avago Technologies today introduced an E-pHEMT (enhancement-mode pseudomorphic high-electron-mobility transistor) power amplifier specifically designed for IEEE 802.
The industry-best, power-added efficiency of our proprietary E-pHEMT power technology has allowed Avago to develop the first low-current, high linearity power amplifier available in the 802.
In addition to ambient light photo sensors that save battery life by controlling backlighting, Avago provides infrared transceivers for transmitting data, FBAR filters and E-pHEMT and CoolPAM power amplifiers that save battery life and help shrink handset size, surface-mount LEDs that provide backlighting styling options, and proximity sensors that automate speakerphones.