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EDM
(redirected from Electron Devices Meeting)

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AcronymDefinition
EDMElectric(al) Discharge Machining
EDMEarly Day Motion (UK parliament)
EDMElectronic Document Management
EDMEdmonton, Alberta (Canada)
EDMEnterprise Data Management
EDMEngineering Data Management
EDMEntity Data Model
EDMElectronic Dance Music
EDMElectric Dipole Moment
EDMElectro Discharge Machining
EDMElectronic Distance Measurement
EDMEssential Drugs and Medicines Policy (WHO)
EDMMaster of Education
EDMElectronic Data Management
EDMExternal Device Monitoring
EDMEnterprise Data Model
EDMEngineering Development Model
EDMElectronic Distance Meter
EDMElectronic Direct Mail
EDMElectronic Direct Marketing
EDMElectronic Discharge Machining
EDMEducational Data Mining
EDMEnvironmental Decision Making
EDMEDM Drilling Machines
EDMEmergency Disaster Management
EDMExtensor Digiti Minimi
EDMElectron Discharge Machining
EDMElectron Devices Meeting
EDMEnterprise Desktop Manager
EDMEuropean Domestic Market
EDMExtended Data Message
EDMElectron Devices and Materials (IEEE workshop)
EDMElectro-optical Distance Measurement
EDMEgo Defense Mechanism (psychology)
EDMEngineering Design Model
EDMError Detection Mechanism
EDMEpiphyseal Dysplasia, Multiple
EDMEmployee Development Manager
EDMElectro-magnetic Distance Measurement
EDMEngineering Demonstration Model
EDMEnhanced Data Mode
EDMEquipment Deadlined for Maintenance
EDMEarly Detection Mode
EDMEmergency Destruction of Munitions
EDMExpress Development Methodology
EDMExternal Digital Modulation (Agilent)
EDMEvent Detection Module
EDMECTU Documents Manager


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? References in periodicals archive
Wernersson described the new nanowire transistors last month at the IEEE International Electron Devices Meeting in Washington, D.
Transistors sprout inner forests by Science News
Details of the method was presented at the 2005 IEEE International Electron Devices Meeting held in Washington from December 5.
Toshiba Develops MEMS-based Cell Manipulation Method by JCNN News Summaries
IBM will present details of the innovative techniques in two papers, titled "Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs" and "High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations" at the International Electron Devices Meeting (
IBM paves way for higher performing, lower power electronic devices ... by EDP Weekly's IT Monitor
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