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FDSOI

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FDSOIFully Depleted Silicon-On-Insulator


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This combination of FDSOI and nickel-silicide metal gates has the effect of straining the silicon lattice within the electrical path to enhance carrier mobility.
Displayed results show that FDSOI approach also addresses the variability issues for this further shrink.
3) * Crolles2: Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate stack for FDSOI cMOSFETs Down to 25-nm Gate Length and Width (IEDM Session 23.
 
 
 
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