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FinFET |
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Innovative Silicon also announced that it has validated its memory bitcell in additional 10 fabrication processes that include 130 nm SOI, 90 nm SOI, and FinFET technologies. AUSTIN, Texas -- Front-end engineers at SEMATECH will combine planar CMOS approaches with new channel materials to develop effective transistors for the 22 nm half-pitch technology generation - but will continue to investigate FinFET devices as an alternative approach. A Novel Electrode Induced Strain Engineering for High Performance SOI finFET utilizing Si (110) Channel for Both nMOS and pMOS. |
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