Also, a thinner charge-trapping film is necessary in order to achieve energy-efficient Fowler-Nordheim
(FN) tunneling during P/E operations.
A]) and inset shows the corresponding Fowler-Nordheim
(F-N) plots of FLG and MWCNTs, respectively.
Two technologies are used to program and erase a flash device: hot electron injection and Fowler-Nordheim
tunneling, a quantum mechanical process in which electrons tunnel through a thin barrier in the presence of a high electric field.
By way of example, the CMOS18 design utilizes Fowler-Nordheim
tunneling for memory cell programming and erasure, thereby eliminating the large charge pump needed in a single transistor module hot-channel electron pro gramming technique.
Philips Semiconductors' CMOS18 Flash utilizes the Fowler-Nordheim
tunnelling to program and erase the memory cells, requiring a much smaller charge pump that only delivers microamps.
During this webinar, fundamentals of FLASH technology testing will be reviewed, incorporating a discussion of Fowler-Nordheim
(FN) and Hot Electron Injection (HEI) programming and erasing.
Electrons in the silicon within this region are raised above their ground state and conduct from the silicon into the oxide via Fowler-Nordheim
Architected for mission-critical extended temperature designs, the patented NOVeA design employs an ultra reliable dual bit-cell floating gate technology based on Fowler-Nordheim
NOVeA employs a patented single poly floating gate Fowler-Nordheim
technology for writing.
FGA(TM) technology is an extension of an existing Xicor proprietary nonvolatile technology that capitalizes on the extraordinary capabilities of thick oxide Fowler-Nordheim
Tunneling devices to retain a precision charge level on floating gate devices.
Erase is by conventional Fowler-Nordheim
To achieve fast writing speed for the AG-AND flash memory cell, the research team changed the programming method from conventional Fowler-Nordheim
(F-N) tunneling to source-side hot electron injection.