FN

(redirected from Fowler-Nordheim)
AcronymDefinition
FNForeign
FNFood Network (TV channel)
FNFinance
FNFront National
FNFinish
FNFunction (keyboard key, BASIC keyword)
FNFactory New
FNFinancial News
FNFirst Name
FNFirst Nation
FNFootnote
FNFight Night (video game)
FNFalse Negative
FNFibronectin
FNFile Number
FNFireman (Navy)
FNFireman (USCG, USN)
FNForenede Nationer (Danish: United Nations)
FNFirst Night
FNForces Nouvelles (Côte d'Ivoire)
FNForente Nasjoner (UN)
FNFinancial Network
FNFeliz Navidad (Spanish: Merry Christmas)
FNFirst Notice
FNFabrique National (arms maker and its rifles)
FNFernando de Noronha (Brazil)
FNFebrile Neutropenia
FNFileNet
FNForeign National
FNFinding Nemo (movie)
FNFowler-Nordheim (electronics)
FNFlat Nose (bullet)
FNFunctional Description
FNFracture Numérique (French: Digital Divide)
FNFind Number
FNFocus Now (Texarkana, Texas)
FNFlight Nurse
FNFroude Number
FNFakultetsnämnden (Swedish: Faculty Board)
FNFundación Natura (Spanish: Nature Foundation)
FnFORCEnet (US Navy)
FNFuzzy Navel (cocktail)
FNFog Nozzle
FNFuture Navy
FNFolder Navigation
FNFragged Nation (gaming website)
FNFaith Networks
FNFully Non-Reciprocal Method
References in periodicals archive ?
Also, a thinner charge-trapping film is necessary in order to achieve energy-efficient Fowler-Nordheim (FN) tunneling during P/E operations.
A]) and inset shows the corresponding Fowler-Nordheim (F-N) plots of FLG and MWCNTs, respectively.
Two technologies are used to program and erase a flash device: hot electron injection and Fowler-Nordheim tunneling, a quantum mechanical process in which electrons tunnel through a thin barrier in the presence of a high electric field.
By way of example, the CMOS18 design utilizes Fowler-Nordheim tunneling for memory cell programming and erasure, thereby eliminating the large charge pump needed in a single transistor module hot-channel electron pro gramming technique.
Philips Semiconductors' CMOS18 Flash utilizes the Fowler-Nordheim tunnelling to program and erase the memory cells, requiring a much smaller charge pump that only delivers microamps.
During this webinar, fundamentals of FLASH technology testing will be reviewed, incorporating a discussion of Fowler-Nordheim (FN) and Hot Electron Injection (HEI) programming and erasing.
Electrons in the silicon within this region are raised above their ground state and conduct from the silicon into the oxide via Fowler-Nordheim tunneling.
Architected for mission-critical extended temperature designs, the patented NOVeA design employs an ultra reliable dual bit-cell floating gate technology based on Fowler-Nordheim tunneling.
NOVeA employs a patented single poly floating gate Fowler-Nordheim technology for writing.
FGA(TM) technology is an extension of an existing Xicor proprietary nonvolatile technology that capitalizes on the extraordinary capabilities of thick oxide Fowler-Nordheim Tunneling devices to retain a precision charge level on floating gate devices.
To achieve fast writing speed for the AG-AND flash memory cell, the research team changed the programming method from conventional Fowler-Nordheim (F-N) tunneling to source-side hot electron injection.