GaAlAs

AcronymDefinition
GaAlAsGallium-Aluminum-Arsenide
References in periodicals archive ?
Low-level 809 nm GaAlAs laser irradiation increases the proliferation rate of human laryngeal carcinoma cells in vitro.
The efficient MOSFET switches use Clare's patented OptoMOS architecture and the optically coupled output is controlled by highly efficient GaAlAs infrared LEDs.
In addition, the report segments the market by doping materials into InGaN, GaN, AlGaInP, GaAlAs, GaInAsSb and other types of doping materials.
A diode GaAlAs laser, with a continuous wavelength (A) 830nm (infrared) and an output of 150mW, was used in this trial.
The output switch is controlled by radiation from a GaAlAs light-emitting diode (LED) that is optically isolated from the photovoltaic generator.
The TLP5751, TLP5752 and TLP5754 are comprised of a GaAlAs infrared LED and integrated high-gain, high-speed photodetector, and feature an undervoltage lockout (UVLO) function.
The output switch is controlled by radiation from a GaAlAs light emitting diode, which is optically isolated from the photovoltaic generator.
The photovoltaic generator is optically isolated from, and is controlled by, a GaAlAs light emitting diode (LED).
Consisting of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip, Toshiba's TLP152 achieves the industry's lowest output current of 2.