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HEMTHigh Electron Mobility Transistor
HEMTHeavy Equipment Mobile Transport
HEMTHigh Electrophoretic Mobility Tyrosinase
References in periodicals archive ?
Fujitsu led the industry with its development of the HEMT in 1980, and the technology now underpins much of today's fundamental IT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
Further, the wide video bandwidth of GaN HEMT transistors allows for their use in multi-carrier applications with two-tone spacing up to 70MHz.
This assessment tool was used to perform a quantitative analysis during R&D on a gallium-nitride HEMT to be used in power supplies(4).
The higher efficiency of GaN HEMT power amplifiers can result in reduced transmitter power consumption.
Thus, bolometer experiments must contend with confounding radiation primarily emitted by galactic dust, while ACMEHEMT and other HEMT surveys are more sensitive to the spurious microwave radiation emitted by electrons in the Milky Way speeding up, slowing down, or changing direction.
Cree's 50V GaN HEMT transistors operating at 100W or 200W output powers are now released for both the 1.
3W, which, among GaN HEMT power amplifiers, represents the world's highest output in this frequency band using single integrated circuit.
For microwave GaN/SiC HEMT this isotopic approach could create a complete shift in the currently used substrate / GaN epi-wafer technology; it intends to grow high thermal conductivity (+30%) semi-insulating SiC on top of low cost semiconducting SiC substrates (widely used by the power electronics and LED industries).
Fujitsu improved crystal quality and optimized the layer structure to mitigate the electric field in a gallium-nitride HEMT structure with few surface traps by using its proprietary n-type GaN cap layer (surface layer).
Nasdaq: CREE) will showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.