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If, for some reason, the average distance of the impurities from the 2DEG was larger on the side of the device close to the Hall voltage than on the side of the device close to ground, then the average distance of the impurities from the 2DEG would be greater for Hall measurements than for [R. Several product application notes that describe methods for conducting a wide range of semiconductor device tests, including charge pumping, oxide reliability, resistivity, hall voltage measurements, gate dielectric capacitance-voltage characterization and high resistance measurements. X'X'] of those wire-to-wire capacitances that have the quantum Hall voltage across them; and the quantized Hall resistance [R. |
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