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HVPE
(redirected from Hydride vapor phase epitaxy)

   Also found in: Wikipedia 0.01 sec.
AcronymDefinition
HVPEHydride Vapor Phase Epitaxy
HVPEHalide Vapor Phase Epitaxy
HVPEHigh-Voltage Paper Electrophoresis (biochemistry)


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NLO was used to compare the optical and structural properties of GaN bulk crystals grown by high-pressure processing, and thin films of the material grown by hydride vapor phase epitaxy, metal-organic chemical vapor deposition, and molecular beam epitaxy.
Now, by combining two layer-by-layer crystal growth techniques known as molecular beam epitaxy and hydride vapor phase epitaxy, the researchers have built the first GaAs structure that operates as an optical parametric oscillator.
ATMI's patented hydride vapor phase epitaxy (HVPE) process produces large area, low defect density GaN wafers that permit simplified device structures, improved heat dissipation and lower device defect density.
 
 
 
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