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These points are shown in Figure 3, which shows a typical forward bias I-V curve of an illuminated solar cell.
The fill factor (FF) is a measure of how far the I-V characteristics of an actual solar cell differ from those of an ideal cell.
Conventional nonlinear transistor and diode modeling utilizes a combination of static DC I-V measurements and S-parameter measurements made at multiple static bias conditions to extract the equivalent circuit element values.
This causes dispersion in the I-V characteristics for diodes and transistors.
Integrated high speed sourcing and measurement capabilities, which allow for ultra-fast I-V testing
To download a free copy of "Ultra-Fast I-V Applications for the Model 4225-PMU Ultra-Fast I-V Module," visit: http://www.
How to properly connect an Ultra-Fast I-V instrument to a probe station
Limitations in Ultra-Fast I-V, including Johnson Noise and others
Characterizing semiconductor devices electrically and understanding the processes used in their production demands a wide array of measurements, including DC I-V, C-V, and pulsed I-V measurements.
No matter what type of measurement is being made, no changes to the probe manipulator cabling are required; the cables can simply be moved from one set of instrument connections to another, which makes it much easier to switch between I-V measurements, C-V measurements, and pulsed I-V testing, simplifying the device characterization process.
Typical applications employ its fast source-measure capabilities to generate I-V curves, measure the resistance of DUTs such as MEMSs and circuit protection diodes, and characterize many other passive and active devices.
I-V characterization of metal films, low-resistance crystal structures, contacts and contact phenomena, superconducting materials, and Josephson and related devices.