InGaAsP

AcronymDefinition
InGaAsPIndium Gallium Arsenide Phosphide
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NIST's development of accurate assessment procedures for InGaAsP will enable sharing of data between laboratories and improve predictive modeling for manufacturers of semiconductor lasers, detectors, and amplifiers.
Present projects involve examining AIGalnP, InGaAsSb and InGaAsP alloys in addition to common strained-layer (In,Ga)As/(AI,Ga) As/GaAs and (In,Ga)As/(AI,Ga)As/InP systems.
Mitsubishi Electric Corporation has already released the uncooled DFB-LDs for 85 degrees C operation, in which an InGaAsP active layer is adopted.
Sensors Unlimited's four new SBIR programs support the development of a dual wavelength InGaAs / InGaAsP pyrometer used to measure high temperatures; an InGaAs focal plane that is sensitive throughout the visible, near-IR, and short-wave IR wavelength bands, thus reducing the inventory of cameras needed for imaging applications; a phase sensitive focal plane array designed for use in surveillance and covert communications; and Geiger mode avalanche photodiodes for photon counting applications in the 0.
In this example, a 1550 nm wavelength bandgap InGaAsP active region is surrounded by InP material.
EMCORE's solutions include: optical components for high speed data and telecommunications; solar cells and solar panels for global satellite communications; electronic materials for high bandwidth communications systems, such as Internet access and wireless telephones; MOCVD tools for the growth of GaAs, AlGaAs, InP, InGaP, InGaAlP, InGaAsP, GaN, InGaN, AlGaN, and SiC epitaxial materials used in numerous applications, including data and telecommunications modules, cellular telephones, solar cells and high brightness LEDs.
EMCORE's solutions include: optical components for high speed data and telecommunications; solar cells for global satellite communications; electronic materials for high bandwidth communications systems, such as Internet access and wireless telephones; MOCVD tools for the growth of GaAs, AlGaAs, InP, InGaP, InGaAlP, InGaAsP, GaN, InGaN, AlGaN, and SiC epitaxial materials used in numerous applications, including data and telecommunications modules, cellular telephones, solar cells and high brightness LEDs.
The microwave-to-photonic submodule consists of an InGaAsP distributed-feedback (DFB) laser diode, a glass ball lens, a YIG film optical isolator, a dielectric gradient-index (GRIN) lens and an 8 [mu]m core single-mode polarization-preserving optical fiber with its axis aligned to the output polarization of the isolator, as shown in Figure 3a.
Definitions (1) DWDM = Dense Wavelength Divisional Multiplexing (2) InGaAsP = Indium Gallium Arsenide Phosphide
InGaAsP lasers have exhibited room temperature CW modulation bandwidths of 25 GHz, and GaAIAs lasers have shown bandwidths greater than 10 GHz.
The ML9XX19 InGaAsP(1) distributed feedback (DFB) laser diode is designed for 1550-nm, long-reach CWDM(2) communications up to 100 km, and the ML7XX19 InGaAsP Fabry-Perot (FP) laser diode meets demands for 1310-nm short-reach communications up to 2 km.
The Company's precision tolerance serves applications that require sub-micron mounting on silicon substrates, InP, InGaAsP and a mix of other III-V semiconductor materials.