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InGaAsP
(redirected from Indium Gallium Arsenide Phosphide)

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AcronymDefinition
InGaAsPIndium Gallium Arsenide Phosphide


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The disk -- a thin layer of indium gallium arsenide sandwiched between layers of indium gallium arsenide phosphide -- absorbs light from a helium-neon laser to generate coherent infrared radiation at wavelengths ranging from 1.
Definitions (1) chirp = dynamic wavelength drift (2) C Band = 1530-1565 nm wavelength range (3) DWDM = dense wavelength division multiplexing (4) InGaAsP = indium gallium arsenide phosphide (5) PMF = polarization maintaining fiber NOTE: A technical paper presentation on the base technology used in the ML9XX38 chip was presented at the European Conference on Optical Communication (ECOC 2002) in Copenhagen, Denmark.
Definitions (1) InGaAsP = Indium Gallium Arsenide Phosphide (2) CWDM = Coarse Wavelength Divisional Multiplexing About Mitsubishi Electric & Electronics USA, Inc.
 
 
 
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