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INP
(redirected from Indium Phosphide)

   Also found in: Encyclopedia, Wikipedia 0.01 sec.
AcronymDefinition
INPInput
INPIndium Phosphide
INPIn Process
INPIntelligent Networking Pack (Hp)
INPImpulse Noise Protection
INPInnovative Naval Prototype (US Navy)
INPInterim Number Portability
INPIntroduction of New Products
INPIf Not Possible
INPIntelligent Network Processor
INPInternet Nodal Processor
INPInternational News Photo
INPInfoscreen Networks Plc
INPInformation Needs Project
INPInternational Network for Peace (anti-violence group)
INPI'm Not Perfect
INPInternational Network Planning
INPIntegration Planner
INPIn-Network Programming (computing)
INPIraqi National Police
INPIrving National Park (Saint John, NB, Canada)
INPIreland Newfoundland Partnership


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Specific topics include the in-situ assessment of macro-pore growth in low-doped n-type silicon, novel morphology-dependent ferromagnetic behavior of meso-porous silicon, electric field effects on the formation of isolated macro-porous silicon, resonant energy transfer from porous silicon to iodine molecules, stain etching with ferric ion to produce thick porous silicon films, and growing a porous layer on n-type indium phosphide in liquid ammonia.
[6] Indium phosphide high electron-mobility transistor (InP-HEMT): Invented in 1979 by Fujitsu Laboratories' Takashi Mimura (currently a Fellow at Fujitsu Laboratories), this is a transistor made of compound semiconductors with excellent speed and noise characteristics.
Next, the team cut up the wafers to yield laser chips in which an applied voltage makes the indium phosphide layer produce light.
 
 
 
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