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InGaP
(redirected from Indium gallium phosphide)

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AcronymDefinition
InGaPIndium Gallium Phosphide
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The next generation indium gallium phosphide (InGaP) devices are Freescale's first to feature active biasing technology.
Freescale Broadens General-Purpose RF Amplifier Portfolio with Four ... by Business Wire
TOKYO -- Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura) announced today it has finished development of a high output Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT)1, and will begin sample shipment on December 15, 2006.
Mitsubishi Electric Announces Sale of High Output InGaP HBT Amplifier ... by Business Wire
BiFET uniquely integrates indium gallium phosphide (InGaP)-based heterojunction bipolar transistors (HBTs) with field effect transistors (FETs) on the same GaAs substrate.
Skyworks Unveils Breakthrough BiFET Process; Patented Technology ... by Business Wire
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