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InGaP |
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The next generation indium gallium phosphide (InGaP) devices are Freescale's first to feature active biasing technology. TOKYO -- Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura) announced today it has finished development of a high output Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT)1, and will begin sample shipment on December 15, 2006. BiFET uniquely integrates indium gallium phosphide (InGaP)-based heterojunction bipolar transistors (HBTs) with field effect transistors (FETs) on the same GaAs substrate. |
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