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InGaAs
(redirected from Indium-Gallium-Arsenide)

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AcronymDefinition
InGaAsIndium-Gallium-Arsenide


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The fins are made not of silicon, like conventional transistors, but from a material called indium-gallium-arsenide.
These receivers contain either a gallium-arsenide (GaAs) detector for wavelengths from 400-900 nanometers or an indium-gallium-arsenide (InGaAs) detector for wavelengths from 400-1650 nanometers.
5-micron fiber input and are available with either a gallium-arsenide (GaAs) detector for wavelengths from 400-900 nanometers or an indium-gallium-arsenide (InGaAs) detector for wavelengths from 900-1650 nanometers.
 
 
 
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