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IGBT
(redirected from Insulated gate bipolar transistor)

   Also found in: Encyclopedia, Wikipedia 0.01 sec.
AcronymDefinition
IGBTInsulated Gate Bipolar Transistor
IGBTIntegrated Gate Bipolar Transistor
IGBTImaging and Graphics Business Team


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A new feature of this edition is a chapter on choke design and optimum drive conditions for modern fast insulated gate bipolar transistors.
International Rectifier, IR([R]) (NYSE: IRF), a world leader in power management technology, today introduced the AUIRG7CH80K6B-M 1200V insulated gate bipolar transistor (IGBT) with Solderable Front Metal (SFM) for high-current, high-voltage automotive inverter modules used in electric vehicles (EV) and hybrid electric vehicles (HEV), as well as medium power drives.
IXYS Corporation (NASDAQ:IXYS) expands its GenX3TM insulated gate bipolar transistor (IGBT) portfolio to 1200Volts.
 
 
 
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