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IGBT |
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International Rectifier, IR(r) (NYSE:IRF), a world leader in power management technology, today introduced four 600V insulated gate bipolar transistors (IGBTs) that can reduce power dissipation in inverters by up to 60%, in motor control applications up to 2. The devices feature latch-up immunity and a fast drive speed of 15 nF in 27 nS, which equip them with the ruggedness, high-power switching speeds and sharp edges needed to drive large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) in demanding, high-efficiency Switch Mode Power Supplies (SMPSs) and other high-speed, high-current switching applications. The library contains nearly 700 ready-to-use models of IR's diode, insulated gate bipolar transistor (IGBT), and power metal-oxide semiconductor (MOS) components. |
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