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Large area silicon carbide vertical JFETs for 1200 V cascode switch operation", Inter.
GaAs JFETs in direct coupled FET logic design with low supply voltage (less than 2 V) display a prompt response and are free of long-term radiation transients.
SemiSouth's SiC diodes and JFETs deliver significant efficiency and durability benefits in high-power applications such as solar inverters, motor drives, telecom rectifiers, UPSs, three-phase inverters and electric vehicles.
Simulation results of testing of the tradition al Trench MOSFET against a WFET in the on state show that the current spread at the bottom of the trench does not suffer from a significant JFET pinching effect.
the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched a new family of low cost SiC JFETS with very good linearity targeted at high-end audio applications.
the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced that its diodes and JFETs have been selected by Vincotech, a leading manufacturer of electronic power modules.
Vincotech introduces new power module with SemiSouth(TM) silicon carbide JFETs --
Being voltage-controlled, there are a number of easy gate drive schemes possible for the JFET, with complete reference designs and application notes available upon request from the Company.
Includes world's first normally-off SiC JFET family up to 50kW;
mWSaver technology can integrate these five patented technologies: off time modulation, internal JFET HV start-up, feedback impedance switch, HV discharge, and PSR constant current control; as well as burst mode operation and low operation current techniques.
com/research/ef53ed/semisouth_sgdr550) has announced the addition of the "Semi-South SGDR550P1 JFET SiC transistor Reverse Costing" report to their offering.
The CTR-101 Curve Tracer plots device characteristics for diodes, transistors, MOSFETs, JFETs, and other LF and RF semiconductors, or demonstrate the linearity of resistive substrates.
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