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At 1700V, SemiSouth's new 4A SJEP170R550 SiC JFET delivers a higher blocking voltage (1700V), five times lower on-resistance (550m), around ten times lower output capacitance (COSS = 20pF) and a gate charge (QG of 10nC) than competing 1500V silicon power transistors.
SemiSouth's SiC diodes and JFETs deliver significant efficiency and durability benefits in high-power applications such as solar inverters, motor drives, telecom rectifiers, UPSs, three-phase inverters and electric vehicles.
the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced a new 1700V/1400m silicon carbide JFET which simplifies start up circuit design in 3-phase auxiliary power supplies.
SemiSouth first to sample 650V 55m SiC JFETs (Photo:Business Wire)
Vincotech introduces new power module with SemiSouth(TM) silicon carbide JFETs --
Being voltage-controlled, there are a number of easy gate drive schemes possible for the JFET, with complete reference designs and application notes available upon request from the Company.
SiC JFETs from SemiSouth target high-end audio (Photo: Business Wire)
SemiSouth SiC Diodes and JFET Chosen by Vincotech to Enhance Performance of Latest Power Modules (Photo: Business Wire)
FlatWorld -- a mixed reality simulation environment merging cinematic stagecraft techniques with immersive media technology, allowing individuals to walk and run freely among simulated rooms, buildings and streets TLAC-XL/CLAS -- a project that investigates the role of storytelling and interactive dialogue with virtual characters JFETS (Joint Center for Fires and Effects Integration) - a test bed for interactive learning and training technology, located at Fort Sill, Oklahoma ICT Games - Two training simulation games: Full Spectrum Command (PC) and the E3 Games Critic Award winner Full Spectrum Warrior (Xbox), which has since become a top-selling consumer game.
As expected, wide band gap semiconductor devices have also started to penetrate those high-end market segments: SiC is present in PV inverters - a total market size of $43 million primarily driven by diodes in micro-inverters, but also by JFETs - and GaN which should be introduced in 2013.
Continuous developments are going on in the fabrication of silicon carbide semiconductor devices such as power MOSFETs, power JFETs, power thyristors, power Schottky diodes, and the other similar discretes.
The CTR-101 Curve Tracer plots device characteristics for diodes, transistors, MOSFETs, JFETs, and other LF and RF semiconductors, or demonstrate the linearity of resistive substrates.
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