Line Edge Roughness

Acronym

Definition

LER

Label Edge Router

LER

Line Edge Roughness (semiconductor fabrication)

LER

Land Equivalent Ratio

LER

Luminaire Efficacy Rating

LER

Light Emitting Resistor (a resistor burning up)

LER

Licensee Event Report

LER

Leaf Elongation Rate (botany)

LER

Loss Exchange Ratio

LER

Local Equipment Room

LER

Luminous Electronics Recycling, Inc (Denver, CO)

LER

Language Equivalence Relations

LER

Local Electrical Room

LER

Laboratoire d'Etude de Radiopharmaceutiques (French)

LER

Land, Easement, and Right of Way

LER

LANSCE/Energy Research Program

LER

Laboratorium voor Ecologische Risicobeoordeling

LER

Lepidoptera of Eretna State

LER

Labyrinth Excluder Ring (engineering)

LER

Lesão por Esforço Repetitivo (Portuguese: Repetitive Strain Injury)

References in periodicals archive	?		Acronyms browser	?		Full browser	?
These differences are considered small enough that they may be accounted for by line edge roughness and uncertainty in matching the location of the cross section to the location of the CD-SEM image. CD-SEM shape-sensitive linewidth measurement final report submitted by Journal of Research of the National Institute of Standards and Technology Using a unique column design and innovative new algorithms, PVM technology enables increasingly vital measurements to be made on the device, including line edge roughness, line edge width variation, and distinguishing open/closed contact holes. NEW CD-SEM SYSTEM FOR SUB-0.15 MICRON METROLOGY UNVEILED by Electro Manufacturing SEMATECH researchers and research partners highlighted the key role the consortium has played in achieving significant advances in EUV resists, specifically through achieving 20 nm resist resolution images for chemically amplified resists and addressing the challenges of simultaneously meeting resolution, line edge roughness (LER), and sensitivity targets in a systematic way. SEMATECH Symposia Reveal Continuing Momentum in EUVL and 193 nm ... by Business Wire	LIN-UART LIN6 LINA LINAC LINALG LINAPS LINAS LINAT LINB LiNbO3 LINC LINCAP LINCC LINCCLOE LINCL LINCLOE LINCOMPEX LINCON LINCS LINCT LINDA LINDI LINDO LINDR LINE Line Edge Roughness LINE II LINEAR LINER LINEX LINF LinGO LINGOs LINH LINJ LINK LINK 11 LINK 14 LINK 4 LINKECOL LINKH LINKS LINM LINN LINNE LINO LINOLEUM LINQ LINS LINSE LINT	Line Designation Table Line Direction Agreement System line discipline line displacement line dot matrix Line dot matrix printer line double Line doubling Line Drawer line drawing line drawing line drawings line drawings line drawn round line dressing line dressing line dressing line dressing line dressing line drilling line drive Line driver Line driver Line Driver Amplifier Line Driver/Receiver line drives line drop line eater Line Echo Cancellation Line Echo Wave Pattern Line Edge Roughness Line edit Line edit Line editor Line encoding Line endings Line Engraved line engraver line engraver line engravers line engravers line engraving line engraving line engravings line engravings line equalizer Line Equipment Line Equipment Number Line Equipment Number Class Line Equipment Transfer Line Errored Seconds line etching Line Existing Account Telephone Number line facility Line family Line family line fault line feed line feed line feed Line Feed Carriage Return

References in periodicals archive

Acronyms browser

Full browser

These differences are considered small enough that they may be accounted for by line edge roughness and uncertainty in matching the location of the cross section to the location of the CD-SEM image.

CD-SEM shape-sensitive linewidth measurement final report submitted by Journal of Research of the National Institute of Standards and Technology

Using a unique column design and innovative new algorithms, PVM technology enables increasingly vital measurements to be made on the device, including line edge roughness, line edge width variation, and distinguishing open/closed contact holes.

NEW CD-SEM SYSTEM FOR SUB-0.15 MICRON METROLOGY UNVEILED by Electro Manufacturing

SEMATECH researchers and research partners highlighted the key role the consortium has played in achieving significant advances in EUV resists, specifically through achieving 20 nm resist resolution images for chemically amplified resists and addressing the challenges of simultaneously meeting resolution, line edge roughness (LER), and sensitivity targets in a systematic way.

SEMATECH Symposia Reveal Continuing Momentum in EUVL and 193 nm ... by Business Wire