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MISFETMetal-Insulator-Semiconductor Field-Effect Transistor
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Current MISFET uses silicon for the channel, but physical limitations of silicon will make it difficult to obtain sufficient drive current in future scaled down MISFETs.
The ultra-thin, Equivalent Oxide Thickness (EOT)(1)-scalable high-k/Ge gate stack with strontium germanide (SrGex) interlayer with high carrier mobility is a basic technology with potential for application in MISFETs at the 16nm node and beyond.
10) 4H-SiC MISFETs with Nitrogen-containing Insulators