MISFET


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AcronymDefinition
MISFETMetal-Insulator-Semiconductor Field-Effect Transistor
References in periodicals archive ?
Current MISFET uses silicon for the channel, but physical limitations of silicon will make it difficult to obtain sufficient drive current in future scaled down MISFETs.
The ultra-thin, Equivalent Oxide Thickness (EOT)(1)-scalable high-k/Ge gate stack with strontium germanide (SrGex) interlayer with high carrier mobility is a basic technology with potential for application in MISFETs at the 16nm node and beyond.
Toshiba Develops a New High-k/Ge Gate Stack Technology for LSIs at 16 Nanometers (nm) Node and Beyond
10) 4H-SiC MISFETs with Nitrogen-containing Insulators
Research and Markets: Silicon Carbide: Volume 2: Power Devices and Sensors
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