Current MISFET uses silicon for the channel, but physical limitations of silicon will make it difficult to obtain sufficient drive current in future scaled down MISFETs.
The ultra-thin, Equivalent Oxide Thickness (EOT)(1)-scalable high-k/Ge gate stack with strontium germanide (SrGex) interlayer with high carrier mobility is a basic technology with potential for application in MISFETs at the 16nm node and beyond.