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MOSFETMetal-Oxide Semiconductor Field-Effect Transistor
MOSFETMetal Oxide Silicon Field Effect Transistor (less common)
MOSFETMetal Oxide Substrate Field Effect Transistor
References in periodicals archive ?
High-switching frequency applications require the reduction of parasitic capacitances of the MOSFET at the expense of RDS(on).
The new Si4642DY SkyFET power MOSFET diode will typically be used as the low-side power MOSFET in synchronous buck converters for notebook core voltage and VRM applications, graphic cards, point-of-load power conversion, and synchronous rectification in computers and servers.
MRF6S21060N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 15.
PHOENIX -- ON Semiconductor (Nasdaq: ONNN), a global leader in power management semiconductor solutions, today introduced a new generation of power MOSFETs offered in tiny SOT-723 packages and optimized for space-constrained portable applications.
The dual heat-dissipation paths provided by PolarPAK's double-sided cooling construction allow high current densities in systems with forced air cooling, enabling more compact designs and/or the ability to reduce the number of paralleled MOSFETs.
30K/W) are just some examples of High Current ISOPLUS i4-Pak(TM) Low-Voltage Power MOSFETs.
Also, with its very low 39 nC Qg and 11 nC Qgd, the IRF6643TRPbF functions well as a primary-side MOSFET in isolated or intermediate DC bus converters.
A Web-based tool that gives designers a detailed simulation of how Vishay Siliconix MOSFETs will perform thermally and be affected by adjacent components in a wide range of applications is now available on the Web site of Vishay Intertechnology, Inc.
Our new 200V DirectFET MOSFET achieves a current rating up to 25 amperes in a footprint the size of an SO-8 with only a 0.
IR's new SmartRectifier IC uses a new technique for precise, direct sensing of voltage thresholds across the SR MOSFETs, allowing fast, accurate control to minimize power losses in mid-power flyback circuits.
Discontinuities in the higher order derivatives of the currents and charges of previous industry standard MOSFET models lead to blatant errors in distortion simulations.
In addition, new chipsets that include DirectFET(R) power MOSFETs and a PWM control IC with integrated drivers, enable as much as 40% smaller circuit size and reduced part count.