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The group has employed molecular beam epitaxy to create first a quantum dot structure made of InAs (indiaum arsenide)/GaAs (gallium arsenide) and then a metal mask with a 0. A low density of InGaAs quantum dots (QDs), semiconductor nanostructures with 10 nm to 20 nm dimensions, is grown on GaAs by molecular beam epitaxy. In particular, molecular beam epitaxy was simply too arduous and slow. |
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