RESURFReduced Surface Field
References in periodicals archive ?
Although already a widely known concept, one issue with RESURF structures was improving the robustness of the breakdown voltage.
The development of the RESURF structure reduced the width of the edge termination structure by 30% while increasing breakdown voltage by 14% compared to the 3rd generation IGBT.
A RESURF structure that reduced the size of the IGBT and switching loss by increasing the breakdown voltage.