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SSDOI |
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IBM is the first to fabricate transistors using ultra-thin SSDOI structures that bypass this SiGe layer, thereby providing high electron mobility while eliminating material and process integration problems. IBM's SSDOI paper indicated that more than 1% tensile strain is needed to enhance hole mobility, and we think that this should be visible with TEM analysis", commented James. IBM is the first to fabricate transistors using ultra-thin SSDOI structures that bypass this SiGe layer, thereby providing high electron mobility while eliminating material and process integration problems. |
SSDOI |
SSDEDG SSDEF SSDF SSDFBC SSDG SSDH SSDHA SSDHH SSDHPER SSDI SSDIB SSDIF SSDK SSDL SSDLS SSDLTR SSDM SSDMF SSDMS SSDN ssDNA SsDNA virus SsDNA virus SSDNN SSDO SSDOI SSDOOSSDP SSDP SSDPA SSDPP SSDQ SSDR SSDRC SSDRS SSDS SSDS Interface Gateway SSDS/AA SSDSA SSDSB SSDSEU SsdSGPS SSDSI SSDSL SSDT SSDTPC SSDU SSDUDE SSDUE SSDUSA SSDV | |||||
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