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SSDOI

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AcronymDefinition
SSDOIStrained Silicon Directly on Insulator


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? References in periodicals archive
IBM is the first to fabricate transistors using ultra-thin SSDOI structures that bypass this SiGe layer, thereby providing high electron mobility while eliminating material and process integration problems.
IBM paves way for higher performing, lower power electronic devices ... by EDP Weekly's IT Monitor
IBM's SSDOI paper indicated that more than 1% tensile strain is needed to enhance hole mobility, and we think that this should be visible with TEM analysis", commented James.
Chipworks Discovers IBM Strain at 90nm, Delay in Low-k by Business Wire
IBM is the first to fabricate transistors using ultra-thin SSDOI structures that bypass this SiGe layer, thereby providing high electron mobility while eliminating material and process integration problems.
IBM Paves Way for Higher Performing, Lower Power Electronic Devices ... by Business Wire
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