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SSDOI
(redirected from Strained silicon directly on insulator)

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SSDOIStrained Silicon Directly on Insulator


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Press commentary at the time of ISSCC indicated that IBM may be using a technique they called Strained Silicon Directly on Insulator (SSDOI), in which a Silicon-Germanium (SiGe) layer is used to strain the SOI layer, and then removed, leaving a strained silicon layer on the buried oxide.
Chipworks Discovers IBM Strain at 90nm, Delay in Low-k by Business Wire
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