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Tokyo, Japan, Jan 17, 2006 - (JCN) - The National Institute for Advanced Industrial Science and Technology (AIST) and Tohoku University announced the manufacture of a high-performance upright-type double gate MOS transistor capable of ultra-large scale integration using neutral beams which cannot damage silicon substrates. Incorporating that material boosts transistor speeds above what's possible with ordinary semiconductors such as silicon. This multi-gate transistor implementation is highly compatible with current manufacturing techniques, which improves our ability to put this technology into high-volume production. |
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