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USJ |
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USJ formation, a critical process in the fabrication of high-performance CMOS devices, currently requires precise spike anneals that limit high-temperature exposure of the wafer to tenths of a second. In addition to USJ activation, WaferMasters' flash anneal technology can be used effectively for thermal donor annihilation, re-crystallization, and impurity doping. A basic p-channel USJ formation requires a very low-energy boron implant (typically less than 1keV) followed by a very quick, rapid thermal-pike anneal (RTA). |
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