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To make their VCSEL, he and Lott used metalorganic vapor phase epitaxy, a technique for stacking perfect crystalline layers into a semiconductor "sandwich. Satbir Madra said, "Metalorganic Vapor Phase Epitaxy (MOVPE) was used to grow lattice-matched n-GaInP/p+GaAs heterojunctions and full Heterojunction Bipolar Transistor (HBT) cells on GaAs wafers. Now, by combining two layer-by-layer crystal growth techniques known as molecular beam epitaxy and hydride vapor phase epitaxy, the researchers have built the first GaAs structure that operates as an optical parametric oscillator. |
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