In 2015, Fuji Electric launched its 7th-generation X Series of
IGBT modules with withstanding voltages of 650 V and 1,200 V, contributing to energy conservation and a stable electric power supply for a wide range of equipment and facilities, including inverters for controlling air conditioners and motors, UPSs, and PCS.
The growth of electric cars is predicted to drive the output value of Insulated Gate Bipolar Transistors (
IGBTs) to US$5.2 billion in 2021, according to a Topology Research Institute research report.
The AFGHL50T65SQDC uses the latest field stop
IGBT and SiC Schottky diode technology to offer low conduction and switching losses in multiple power applications, including those that will benefit from reduced reverse recovery losses, such as totem pole based bridgeless power factor correction (PFC) and inverters.
Freewheeling stage (Stage D): From the beginning of this interval, the main switch [S.sub.2] is in turned-off and the auxiliary
IGBT [S.sub.b] is still conducting.
The pre-switches in front of the output stages must be powerful enough to quickly fill the gate of the
IGBT transistors of the CPS output stage.
Unfortunately during its operation, various failures can affect the inverter especially in terms of its so-called power components (
IGBT in our case study) because of their fragility.
In recent years, productivity improvement in the low-acceleration and high-concentration ion implantation process is required for the products (RC-IGBT)*1 that
IGBT and diode are integrated into a single chip in order to reduce drive power loss, increase switching speed, improve characteristics and downsize the module.
The switching losses of Si
IGBT are given by (13), where [E.sub.I,on] and [E.sub.I,off] are the energies lost, respectively, in its turn-on and turn-off, and [f.sub.s] is the switching frequency.