Acronyms

PECVD

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(redirected from Plasma-enhanced chemical vapor deposition)
AcronymDefinition
PECVDPlasma-Enhanced Chemical Vapor Deposition
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References in periodicals archive
Lee, "[O.sub.x]idation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature," Applied Physics Letters, vol.
Hicks, "Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature," Solar Energy Materials and Solar Cells, vol.
They prepared superhard nc-TiN/[alpha]-[Si.sub.3][N.sub.4] coatings with hardness above 49 GPa using plasma-enhanced chemical vapor deposition. (4) The generic aspect of their theory is that the network of the amorphous phase separates the nano-crystallites; thereby high structural flexibility can be assured to accommodate coherent strain.
The heart of its coating technology is a special glass-like plasma-enhanced chemical vapor deposition (PECVD) hard coating and abrasion layer, combined with a special long-lasting weathering layer called Exatec SHX and a water-based primer called Exatec SHP 9.
Thin film solar cells were fabricated using a single-chamber plasma-enhanced chemical vapor deposition unit at 200[degrees]C, with a working pressure of 700 x [10.sup.-3] Torr and a deposition power of 20 W.
(8.) Kima, K-S, Yoonb, S-Y, Leec, W-J, Kimb, KH, "Surface Morphologies and Electrical Properties of Antimony-Doped Tin Oxide Films Deposited by Plasma-Enhanced Chemical Vapor Deposition." Surf.
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