This technical resource for engineers and researchers in the semiconductor fabrication industry presents guidelines on various techniques for growing single silicon crystals, for silicon wafer preparation for very large scale integration (VLSI) and ultra large scale integration (
ULSI), and for the analysis and evaluation of silicon wafers.
Roy, "Electromigration in
ULSI interconnects," Materials Science and Engineering R: Reports, vol.
compile 15 chapters that explain the status, developments, and new materials and methods for advanced interconnect technology for the creation of Ultra Large Scale Integration (
ULSI) devices, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects.
Papers from the conference describe recent work in the field of
ULSI interconnect technology including metallization, dielectrics, integration, packaging, design, and vertical integration.
Newbury, Advanced SEM Imaging, in Characterization and Metrology for
ULSI Technology, D.
In MOSFET and
ULSI process design, oxide defects may limit device reliability, especially if the oxide thickness has been scaled to a few atomic layers.
Single electron transistor is progressing towards logic applications to improve performance of ultra-large-scale integrated circuits (
ULSI) and metal oxide semiconductor field effect transistor.