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GaN |
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SDK) has developed a new process for making high-quality compound semiconductors based on gallium nitride (GaN) and other nitrides to meet growing demand mainly for use in blue/white LEDs. Formed on a large diameter silicon substrate, the gallium nitride high electron mobility transistor (GaN-HEMT) achieves a world record transconductance rating of 350mS/mm, a maximum oscillation frequency of 115GHz and a current gain cut off frequency of 56GHz, which are all comparable to figures achieved on conventional silicon carbide (SiC) substrates. While trying to make nanoscale wires of gallium nitride, he and Gao discovered that they had instead created tiny, hollow cylinders of carbon known as carbon nanotubes. |
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