Junction Transistor SPICE model adds to GeneSiC's comprehensive suite of design support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement GeneSiC's comprehensive family of SiC
Junction Transistors and Rectifiers into the next generation of power systems.
MOSFETs The new SiC
MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency.
The impurity concentration in n-3C SiC
was chosen [N.
Five grams of SiC
were dispersed in 550 ml of distilled water, with or without DBSA, and stirred 15 min; then the oxidant, Fe[Cl.
The contribution of INTRINSIC's ZMP process to Cree's existing world-class SiC
technology and high-volume manufacturing capability represents a unique opportunity to make a new generation of cost effective SiC
devices available sooner than had previously been envisioned.
Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC
MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times.
However, so-called micropipe defects--voids that permeate SiC
material as it is grown--have hampered yield improvement and price reductions.
INTRINSIC manufactures both insulating and conducting SiC
wafers, and SiC
and gallium nitride (GaN) epitaxial products in 50-mm and 75-mm diameters, and will expand all products in this diverse line to 100-mm.