This article presents the design of a 2.4 GHz CMOS PA using this technique, fabricated in a TSMC 0.25 [micro]m 1P5M standard CMOS process.
In the standard 0.25 [micro]m 1P5M CMOS process, the NMOS transistor has a drain-source breakdown voltage of approximately 5.4 V and a knee voltage of approximately 0.5 V.