2DEG


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AcronymDefinition
2DEGTwo-Dimensional Electron Gas
References in periodicals archive ?
It can be seen that the conduction band offset between AlGaN and GaN layers decreases with increasing temperature, which means that the depth of the quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on 2DEG reduces.
In this work, we consider a uniformly charged finite rectangular domain (which would represent either a uniformly charged nanoplate or a finite rectangular jellium background for a 2DEG) and calculate exactly the amount of Coulomb electrostatic self-energy stored in that system.
When this technique is applied to GaAs/AlGaAs heterostructure 2DEG, the electrons are depleted beneath the locally oxidized surface.
If the store is subject to the |extremes of ambient temperature, precautions should be taken for maintenance, probably between 2deg and 25degC.
The increase of negative charge density (NCD) on the surface leads to the depletion of 2DEG. This is mainly caused by the induced positive charges that appeared around the AlGaN/GaN interface by NCD, which then neutralize the electrons in channel.
Short-term results of this study indicate that the fixation methods of RBL or IST performed on an outpatient basis are encouragingly effective in the treatment of 2deg haemorrhoids as 90% were completely recovered at 4th week of treatment with either treatment.
intrinsic charge of the biomolecules at the biofunctionalized gate electrode alters the surface potential and thus the 2 dimensional electron gas (2DEG) density at the heterointerface.
Among the advantages of [delta]-FET are a high concentration of the quasi-2DEG (two-Dimensional Electronic Gas), a high breakdown voltage of the Schottky contact, and a narrow distance of the 2DEG from the gate and high transconductance [2-5].
The electrical control of spin via Rashba spin-orbit coupling [4], which arises due to inversion asymmetry of the confining electric potential for tow-dimensional electron gas (2DEG), is very important physical parameter when dealing with semiconductor spintronics.
The studied sample is similar to a sheet resistance represented by a GaAs channel with a two-dimensional electron gas (2DEG).
The discussion primarily focuses on 2DEG channels formed at heterointerfaces and their use for FETs.
It is possible that the high temperature can excite electrons into the second subband of the 2DEG, breaking the two-dimensional nature of the system.