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The degradation was manifested in lower output power and efficiency for the same IM3 or ACPR1, a shift of the dip (or the sweet spot) in IM5 and a degradation of ACPR2.
The first and second adjacent-channel ACPRs (ACPR1 and ACPR2, respectively) are defined as the ratio of the main channel power to the first and second adjacent-channel leakage power, respectively.
ACPR1 closely Follows the characteristic of the IM3 distortion with an offset value.
Similar to the low [I.sub.q] case, ACPR1 and ACPR2 are correlated to the IM3 and IM5 distortions, respectively.
To further illustrate the correlation between W-CDMA ACPR1 and IM3 distortions, the load- and source-pull contours of the HJFET were measured.
Due to the close correlation, the ACPR1 dip is explained in terms of a similar characteristic on the IM3 distortion.
The ACPR1 dip under the W-CDMA specification also can be explained in a similar manner due to its strong correlation with the IM3 distortion discussed previously.
Operating at a low [I.sub.q] of 80 mA, the HJFET exhibited a high PAE of 44.2 percent and an ACPR1 of -43 dBc at an output power of 28 dBm, achieving significant PAE improvement compared to the high [I.sub.q] operation.
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