ALSBAqualogic Service Bus
ALSBAcademy of Legal Studies in Business
ALSBAir Land Sea Bulletin (Air Land Sea Application)
Copyright 1988-2018, All rights reserved.
References in periodicals archive ?
AlSb is a promising semiconductor material (III- V family) for high temperature applications due to a large band gap especially for P-N junction diodes and transistors (Herczog et al, 1958; Singh and Bedi, 1998; Zheng et al, 2010).
From the work done earlier, it can be seen that the study of structural, morphological and electrical properties of AlSb with the variation of laser shots needs to be addressed.
AlSb samples were prepared by standard powder metallurgy method in stoichiometric ratio.
Finally, the active area is defined by chemical deep mesa isolation using HF/[H.sub.2][O.sub.2] solution to completely remove the AlSb buffer, leading to air-bridge gate.
Codron -L et al., "AlSb nucleation induced anisotropic electron mobility in AlSb/InAs HEMTs heterostructures on GaAs," Applied Physics Letters, vol.
The logical progression of this trend is to use pure InAs as channel along with the nearly lattice-matched Alsb and AlGaSb for the confining layers as arsenide's are not suitable barriers.
At least on paper, an HFET with a narrow InAs channel, confined not by GaAs but by AlSb, might lead another step towards higher speeds and even lower mm-wave noise properties.
Kroemer, "The 6.1 A family (InAs, GaSb, AlSb) and its heterostructures: a selective review," Physica E, vol.