APCVD

AcronymDefinition
APCVDAtmospheric Pressure Chemical Vapor Deposition
References in periodicals archive ?
(3-8) Various methods, including RF sputtering, electron beam evaporation, spray pyrolysis, photochemical vapor deposition, the sol-gel method, and atmospheric pressure chemical vapor deposition (APCVD), have been used to deposit these films.
In this study, a conventional APCVD technique was used to grow highly conducting and transparent tin oxide layers, aimed at undoped [SnO.sub.2] layers on boron silicate glass substrates.
Gesheva and colleagues compile research results on different thin film optical coatings fabricated by atmospheric pressure chemical vapor deposition (APCVD) in its classical versions: chloride CVD with a dioxydychloride precursor, and carbonyl CVD with metal hexacarbonyl precursors.
Parkin, "Sulfur-and nitrogen-doped titania biomaterials via APCVD," Chemical Vapor Deposition, vol.
Gordillo, "Structural, optical and electrochemical properties of Ti[O.sub.2] thin films grown by APCVD method," Applied Surface Science, vol.
Nishino, "Raman scattering investigation of polycrystalline 3C-SiC film deposited on Si[O.sub.2] by using APCVD with hexamethyldisilane," Journal of the Korean Physical Society, vol.
It has the high temperature stability necessary for processing DSCs, is the least expensive TCO [21], and is deposited with high throughput during glass manufacture using atmospheric pressure chemical vapour deposition (APCVD).
The FTO glass substrate (2.2 mm thick glass with a 600 nm layer of FTO deposited commercially by APCVD) and an uncoated glass substrate of identical thickness were exposed to 12.5 s of NIR radiation and measured upon exit with an IR camera to estimate the surface temperature.
[16] produced a very successful system of Si doped cauliflower-type [Fe.sub.2][O.sub.3] prepared by atmospheric pressure chemical vapor deposition (APCVD).
In order to simulate a glass substrate and prevent the crystal orientation of the wafer substrate from affecting the crystallization of the a-Si:H layer [9], a 200 nm thick Si[O.sub.2] film was deposited over the wafer surface in a wet oxide tube using atmospheric-pressure chemical vapor deposition (APCVD).
proposed that the Ti[O.sub.2] thin films deposited by atmospheric pressure chemical vapor deposition (APCVD) can effectively passivate n-type silicon and Boron-diffused surfaces as better as the passivation performance of Si[O.sub.2].