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Moreover, the AuCu alloys are widely used in the electronic industry, catalysis, dentistry, jewelry, thin films, and nanocrystal materials because these alloys exhibit excellent mechanical strength, chemical stability, and processability [7, 8].
In this work the combined effect of the prepared AuCu alloys and silicides by thermal interdiffusion in the Au/Cu/Si systems on the morphology and the electrical resistivity of the alloys are described.
In a previous work, the study of physical and morphological properties of AuCu binary alloys was performed for the three different concentrations: 25: 75, 50 : 50, and 75: 25 at%.
Figure 1 also shows the main peak (111) of the formed AuCu alloy and the XRD of the Au/Cu bilayer after annealing, corresponding to a stable and cubic structure.
In the present work we proposed a longer annealing time than other works, in order to achieve the AuCu alloy formation.
The rectangular (8 x 5 [micro][m.sup.2]) geometries are composed of an AuCu layer with a composition of 47.96 at.% Cu and 15.42 at.% Au (atomic ratio Au: Cu maintaining on 25: 75 at.% or 1:3) diffused with silicon.
Figure 2(c) shows the AuCu bilayer as deposited on silicon before the annealing treatment, and it shows a difference of 2% in the atomic ratio and the initial bilayer of 115 nm.
This is possibly due to the combination of the AuCu and CuSi alloys.