VBE

(redirected from Base-Emitter Voltage)
AcronymDefinition
VBEVerband Bildung und Erziehung (German: Combined Training and Education)
VBEVisual Basic Editor (Microsoft)
VBEVisual Basic Script Encoded
VBEVisual Basic Environment
VBEVisual Basic Editor
VBEVideo Bios Extension
VBEVanillyl Butyl Ether
VBEVoltage between the Base and Emitter
VBEVESA Bios Extension
VBEVisual Basic Environment (Microsoft)
VBEBase-Emitter Voltage (transistors)
VBEVeteran Business Enterprise (business classification)
VBEVelocity for Best Endurance (flight planning)
References in periodicals archive ?
Due to the low impedance at the base, high transconductance, and output resistance compared to MOS devices, the BJT is characterized as current-controlled current source useful to compute nonlinear functions by their logarithm dependence between base-emitter voltage [V.sub.BE], collector current [I.sub.C], and temperature, which recently has led to its integration into the CMOS-based architectures [5-8].
where "[mathematical expression not reproducible]" is base-emitter voltage for [Q.sub.2] ([approximately equal to] 0.7 V), "[V.sub.t]" is the electron thermal voltage ([approximately equal to] 0.026 V), "[V.sub.OS]" is the input offset voltage for operational amplifier, "n" is the ratio between number of [Q.sub.2] and number of [Q.sub.1].
By exploiting the temperature-dependent base-emitter voltage [V.sub.BE] of the parasitic substrate bipolar transistors (PNPs) available in standard CMOS technology, the temperature information is extracted.
Most electronic engineers know that a transistor's base-emitter voltage ([V.sub.BE]) has a temperature coefficient (TC) of about -2 mV/[degrees]C.
This technique helps to stabilize the base-emitter voltage of the biasing circuit, ensuring insensitivity towards an abrupt change of the supply voltage.
Hence, the base-emitter voltage corresponding to 10 ns pulse with 0dB power level is taken as a reference.
The last output transistor will not saturate because its collector-emitter voltage is now equal to the sum of its own base-emitter voltage and the collector-emitter voltage of the previous transistors.
If the TF characteristic of a bipolar device was given in terms of the dependence of collector current on base-emitter voltage, [i.sub.C][[v.sub.BE]], it would be approximately exponential.
Their proportional to absolute temperature (PTAT) variation is apparent due to the negative factor the base-emitter voltage [V.sub.BE2] is multiplied by.
The principle of the analog and digital output temperature sensor is that the forward base-emitter voltage [U.sub.BE] of a transistor is temperature and current dependent according to the following equation [1]
Some ICs from SMSC use an external 2N3904 transistor as a sensor, measuring the base-emitter voltage to obtain a temperature.