DFETDemocracy for East Tennessee (est. 2004)
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References in periodicals archive ?
[T.sub.g] and [T.sub.d] are 303 and 2563 K, respectively, for a TriQuint 5 x 60 [micro]m GaAs DFET at [V.sub.ds] = 1.5 V and [V.sub.gs] = -0.4 V at 5 GHz.
Noise parameters (2 to 26 GHz) for the DFETs are measured using an HP 8970SN microwave noise figure measurement system, an NP5 noise measurement system and a SUMMIT 9000 on-wafer probe station.
Figure 8 shows a photograph of a cascode LNA fabricated with the TriQuint TQTRx process using 0.6 [micro]m DFETs. The chip size is 50 x 20 mil [2].
The TQ9205K addresses these requirements with a two-stage, class A, common source DFET design.
The downconverter utilizes a single-ended passive FET mixer.[3] The mixer IF port feeds a common source DFET amplifier and source follower pair.