DFETDemocracy for East Tennessee (est. 2004)
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d] are 303 and 2563 K, respectively, for a TriQuint 5 x 60 [micro]m GaAs DFET at [V.
Noise parameters (2 to 26 GHz) for the DFETs are measured using an HP 8970SN microwave noise figure measurement system, an NP5 noise measurement system and a SUMMIT 9000 on-wafer probe station.
3] The mixer IF port feeds a common source DFET amplifier and source follower pair.