DGFETDual Gate Field Effect Transistor
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Although the models are extracted from the measured S-parameters of a 300 [mu]m DGFET, such measurements can be scaled to obtain element values for dual-gate FETs having different gate widths.
We have presented a modeling procedure to obtain an accurate lumped-element equivalent circuit model of a DGFET.
Speaking about today's advancements in modeling, Gennady Gildenblat from Arizona State University (ASU) presented "Compact Model of Independent Gate Asymmetric DGFET," and Darsen Lu representing the University of California (UC) Berkeley presented "A Multi-Gate CMOS Compact Model - BSIMMG.