DGFETDual Gate Field Effect Transistor
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The control port is RF grounded for varying the gain when the DGFET is used as a variable gain amplifier.
Although the models are extracted from the measured S-parameters of a 300 [mu]m DGFET, such measurements can be scaled to obtain element values for dual-gate FETs having different gate widths.
We have presented a modeling procedure to obtain an accurate lumped-element equivalent circuit model of a DGFET. Applications of dual-gate GaAs FETs in performing a wide range of functions in microwave circuits also have been presented.