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DoSDepartment Of State (United States)
DoSDisk Operating System
DoSDate of Service (health insurance)
DoSDenial Of Service (attack)
DoSDepartment of Space (India)
DoSDepartment of Statistics
DoSDay of Show
DoSDensity of States
DoSDistribution of States
DoSDirector of Security
DoSDirector of Sales
DoSDivisión de Organizaciones Sociales (Spanish: Division of Social Organizations; Chile)
DoSDepartment of Surgery
DoSDivision of Safety (various locations)
DoSDepartment of Shipping (various locations)
DoSDean of Students
DoSDays of Supply (US DoD)
DoSDate Of Separation
DoSDirector of Operations and Support
DoSDaughter of Satan
DoSDirector of Emergency Services
DoSDisciplines of Study (UK)
DoSDegree of Saturation
DoSDepartment of Sanitation (New York City)
DoSDistributed Operating System
DoSDegree of Scattering
DoSDegree of Superiority (algorithm comparison)
DoSDivision of Standards (Massachusetts)
DoSDirectorate of Safety (various organizations)
DoSDeposition On Silicon
DoSDead on Scene
DoSDeclaration of Security
DoSDemocratic Opposition of Serbia
DoSDirectly Operated Stores
DoSDenial of Service
DoSDedicated Office System
DoSData Overrun Status
DoSDevelopment Open Server
DoSData Output Stream
DoSDigital Operating System
DoSDistrict Open Space (Hong Kong)
DoSDemokratska Opozicija Srbije (Democratic Opposition of Serbia; Coalition of Democratic Political Serbian Parties)
DoSDistrict of Sechelt (Canada)
DoSDirector of Ordnance Services (Australia)
DoSDistributed Object Server (Objectstream - SS7)
DoSDozing Off Soon
DoSDependents Overseas
DoSDirect Operating System
DoSDreaded Orange Spots (soapmaking, indicates soap has gone rancid)
DoSDirection des Opérations de Secours
DoSDad Over Shoulder
DoSDirector Of Operations & Support
DoSDirectionally Oriented Structures
DoSDate of Sobriety (recovery programs)
DoSDenver Orchid Society
DoSDate of Seeding
DoSDeutscher Orgon Service
DoSDaemons of Shadow (gaming)
DoSDeployed Operational State
DoSDropout Studios
DoSDivision of Operational Safety (US Atomic Energy Commission)
DoSDistributed Open-Short (microwave theory)
DoSDenied Originating Service
DoSDesignated Operator Service (SBC)
DoSDementia Observation System (psychology)
DoSDiis Omnibus Sacrum (Latin: Sacred to All the Gods, epigraphy)
DoSDeclaration of Safety
DoSDistrict Office Study
DoSData Overhead Switch (Nortel)
DoSDensité d'Occupation des Sols (French: Density Land Use; France and Canada)
DoSDirector of Study/Studies
DoSDetachable Output Stream
DoSDuncan's Outdoor Shop (Bay City, Michigan)
References in periodicals archive ?
The effective density of states of the conduction band ([N.sub.C]) in ZnO at room temperature is 4.8 x [10.sup.18] [cm.sup.-3] [31].
Density functional theory (DFT) has been extensively used for the calculation of adsorption energy and density of states (DOS) properties of individual pristine carbon nanotube (C-CNT), boron doped carbon nanotube (B-CNT), and silicon doped carbon nanotube (Si-CNT) on gas adsorption.
Figure 3 shows the calculated density of states of cation and anion doped SrSn[O.sub.3].
From the kinetic energy principle, [absolute value of v] = [square root of 2E/m], DOS(E) is density of states, [MATHEMATICAL EXPRESSION NOT REPRODUCIBLE IN ASCII] is the Fermi-Dirac distribution function which gives the probability of occupation of a state at any energy level, and n is carrier concentration [33].
As we will see, the properties of interacting electron systems are governed by the electronic density of states [47], which changes upon reducing spatial dimensions.
Figure 5(a) shows the calculated total density of states (TDOS) and partial density of states (PDOS) of the Fe-Si system.
The density of states demonstrates that S-Ga bond plays an important role in Heck reaction.
The electronic properties such as the density of states (DOS) of the bonded structure were calculated and compared with those of the graphene in Figure 2.
TABLE 1: Photovoltaic and kinetic parameters of Z1, Z2, and Z3 DSSCs photoelectrodes along with their amounts of adsorbed dye and the onset potential for exponential distribution of the density of states (DOS).
However, the gate capacitance of a MOS structure with a finite density of states cannot be described properly by the oxide capacitance alone [9].
Theoretically, it is expected that higher operating temperature affects cell parameters such as the band gaps, carrier concentrations, density of states, and electron and hole mobility.