E-FETEnhanced-Mode Field Effect Transistor
Copyright 1988-2018 AcronymFinder.com, All rights reserved.
References in periodicals archive ?
The D-FETs feature nominal values of saturated drain currents of 185 mA/mm, transconductances of 200 mS/mm and an [f.sub.t] of 25 GHz, while the corresponding E-FET parameters are 50 mA/mm, 190 mS/mm and 18 GHz.
The Microwave Harmonica nonlinear simulator was used in the mixer design using Materka models for both the E-FETS and D-FETS.
A MMIC quadrature IF mixer (QIFM) circuit is implemented using a pair of enhancement mode MESFETs (E-FET) connected as passive ([V.sub.ds] = 0 V) devices.